Equipment Capabilities

Explore the equipment available for your use at the TNFC and learn about their capabilities. TNFC facilities are open to both academic and industrial researchers, making the centre an ideal choice for open-access prototype development and testing. Key research areas include: Microelectronics, Photonics, Integrated Optics and Nanomaterial Processing. With two facilities to serve you, the TNFC is Canada's premier hub for semiconductor research and education.

TNFC capabilities include:

Electron Beam Lithography

Photolithography

Deposition

Etching

Dicing & Packaging

Imaging & Characterization

Electron Beam Lithography

Raith EBPG 5000+ Electron Beam Lithography System

The EBPG 5000+ is a state-of-the-art Gaussian beam vector scanning electron beam lithography system.

Acceleration Voltage: 100 kV
Maximum Field Size: 1024 x 1024 µm² (20 bit)
Maximum pattern generator frequency: 50 MHz
Beam current: 50 pA to 300 nA
Substrate size: 1 to 15 cm
Exposure Resolution: < 10 nm
Field Stitching Accuracy: 20 nm (mean + 3σ)
Overlay Accuracy: 20 nm (mean + 3σ)
Positioning Accuracy: 0.6 nm (interferometric stage)

Pattern fracturing, and the associated options and capabilities, is the heart of Layout BEAMER package. The Layout BEAMER software interprets design data and converts it into the formats needed to write with the EBPG 5000+ system.

Input File Format: All major formats (GDSII, CIF, DXF, LTXT, bitmap)
Integrated Layout Editor
Layout Operations (healing, biasing, tone reversal, merge, Boolean operations)
Proximity Effect Corrections (PEC)
Advanced fracturing (arbitrary shapes, curved fracturing, field position control)
Output File Format: GPF
Single user (one at a time), floating (network) license

Nanolithography Wetbenches

The Wallberg Nanolithography Facility hosts two VPFX-6 microzone wetbench stations dedicated to substrate cleaning, EBL resist spin coating, curing, development and removal.

Provides a class 100 (ISO Class 5) working environment
Segregated, dedicated wetbench stations and resist spinners for positive tone & negative tone resist preparation
Vacuum enabled, dedicated hotplates with digital control
Includes DI water, nitrogen gas utilities and all necessary chemical supplies for EBL resist preparation

Thin Film Thickness Measurement System

The Thin Film Thickness Measurement System provides a quick and reliable solution for measuring the thickness of translucent or low absorbing thin films from 10 nm to 50 um with 380 nm – 1000 nm spectral range. The measurement is based on specular reflectance and uses tungsten halogen light source (360-2400 nm), high-resolution spectrometer, 400 µm diameter fiber optic reflection probe, and a manual stage. User-friendly software (TFCompanion) complements the setup.

ShelLab 1330GM Gravity Convection Oven

The ShelLab 1330GM Gravity Convection Oven is hosted by the Wallberg Nanolithography Facility and is used primarily for post-bake of electron beam lithography resists on sample substrates.

Recovery Time: 10 minutes at 150°C
Heat-up Time: 15 minutes to 150°C
Temperature Uniformity: ± 2.0°C at 150°C
Temperature Range: 40ºC to 240ºC
Digital electronic timer

Nikon Eclipse LV100 Microscope

Nikon’s Eclipse LV100 microscope, available in diascopic and episcopic microscope illumination modes, produces bright, clear, and high contrast images. The microscope has 4 objectives (x5, x10, x20, x50, x100), a 6 x 4” stage and a DS-Fi1 camera. Image processing is possible with the Nikon NIS-elements D3.0 imaging software.

Lithography User Recipes

Photolithography

Suss MicroTec MA6/MA4 Mask Aligners

The MA6 and MA4 Mask Aligners use UV light to transfer patterns from photomasks onto substrates coated with photoresist.

Exposure Resolution: < 1 µm
Alignment accuracy: Topside – 500nm
Exposure modes: Hard contact, soft contact, proximity, flood
Spectral range: 365nm – 405nm
Substrate accommodation: 1cm2 pieces and wafers up to 4″(MA4) or 6″ (MA6)
Uniformity: +- 5% over exposure area
CCD camera and monitor for image capture

Photolithography Wetbench

The Pratt Microfabrication Facility hosts a photolithography wet processing station dedicated to substrate cleaning, photoresist spin coating, curing, development and removal.

Provides a class 10 (ISO Class 4) working environment
Segregated wetbench stations and resist spinners for positive tone & negative tone resist preparation
Multiple hotplates available with manual control
Includes DI water, nitrogen gas utilities and all necessary chemical supplies for photoresist preparation

Deposition

Oxford Instruments PlasmaLab System 100 PECVD

The PlasmaLab System 100 PECVD system is hosted by the Pratt Microfabrication Facility, and is configured to deposit high quality silicon dioxide, silicon nitride and silicon oxynitride films with thicknesses up to several microns via a plasma-assisted chemical reaction process.

Available Chemistries: 5% SiH4 in 95% N2, NH3, N2O, N2, Ar, He and 80% CF4 in 20% O2
Substrate accommodation: Small samples up to 8″ wafers
Deposition temperature: 250C – 400C
Typical Rate: 4-40 nm/min (oxide), 10-100 nm/min (nitride)
Automated sample loading with load-lock chamber

Expertech CTR-200 LPCVD

The Expertech CTR-200 LPCVD system is hosted by the Pratt Microfabrication Facility, and is configured to deposit high quality silicon nitride films via a high temperature, low-pressure chemical reaction process.

Available Chemistries: 1:3 H2SiCl2:NH3 (Stoichiometric), 4:1 H2SiCl2:NH3 (Low-Stress)
Substrate accommodation: 4″ and 6″ wafers
Deposition Temperature: 760C – 880C
Typical Rate: 3-4 nm/min

Bruce Technologies Oxidation Furnace

The Bruce Oxidation Furnace is hosted by the Pratt Microfabrication Facility. The furnace is able to grow oxide films on silicon wafers using a dry or wet oxidation process.

Substrate accommodation: Up to 4” wafers (batches)
Temperature recipes available up to 1250C
Wet & dry oxidation chemistries available
Programmable multi-step temperature ramping
Motorized loading arm for wafer boats

AJA International ATC Orion 5 Sputter Deposition System

The ATC Orion 5 Sputter Deposition System is hosted by the Pratt Microfabrication Facility. The system is used to deposit thin film dielectric and metal materials (including magnetic materials) onto wafer substrates via a plasma-induced sputter deposition process.

Targets: See Process Database for Materials
Argon, oxygen, and nitrogen plasma capability
Substrate accommodation: Small pieces up to 6″ wafers
Wafer heating via quartz halogen lamp (RT – 850C)
Software controlled multi-step recipe design
Substrate RF/DC biasing capability
Typical Rate: 0.5-3 Å/s

Angstrom Nexdep Electron Beam Evaporator

The Angstom Nexdep Electron Beam Evaporator is hosted by the Pratt Microfabrication Facility. The system is used to deposit thin metal films onto wafer substrates using an electron-beam vapor deposition process.

Source Materials: Au, Al, Cr

Deposition User Recipes

PECVD Deposition Recipes

PECVD Recipes

Oxide & Nitride Deposition Recipes

Material	Temperature (ºC)	Pressure (mTorr)	Gas flow (sccm)	Power (W)	Deposition rate (nm/min)
SiO2	300	400	30 5%SiH4/N2, 700 N2O	45	4
SiO2	300	1000	170 5%SiH4/N2, 710 N2O	30	40
Si3N4	300	650	400 5%SiH4/N2, 20 NH3, 600 N2	40 (LF, Pulse: 7), 50 (RF, Pulse: 13)	10
Si3N4	300	1800	450 5%SiH2/N2, 10 NH3, 1000 N2, 1000 N2O	160 (LF, Pulse: 10), 200 (RF, Pulse: 10)	100
Clean	300	1300	150 80%CF4/O2	200	–

LPCVD Deposition Recipes

Sputter Deposition Rates & Parameters

Sputter Deposition Recipes

Metal Sputtering (DC Power)

Material	Default Gun #	Pressure (mTorr)	Gas flow (sccm)	DC Power (W)	Sputter rate (Å/s)
Ni	1	3	30 Ar	200	1.8
Cu	1	3	30 Ar	200	3.1
Ti	2	3	30 Ar	200	0.8
Al	2	3	30 Ar	200	1.1
Cr	2	3	30 Ar	200	1.5
W	5	3	30 Ar	200	0.8
Ta	5	3	30 Ar	200	1.4

Dielectric Sputtering (RF Power)

Material	Default Gun #	Pressure (mTorr)	Gas flow (sccm)	RF Power (W)	Sputter rate (Å/s)
Si	3	3	30 Ar	300	1.0
SiO2	3	3	30 Ar	300	0.7
Si3N4	3	3	30 Ar	150*	0.22
Al2O3	4	3	30 Ar	250*	0.16
MgO	4	3	30 Ar	300	0.1
ITO	4	3	30 Ar	50*	0.3

*Maximum power permitted based on published maximum power density.

Parylene Coating Recipes

Etching

Oxford Instruments PlasmaPro Estrelas100 DRIE System (Si)

The PlasmaPro Estrelas100 DRIE System is hosted by the Pratt Microfabrication Facility. The system is used to etch high aspect-ratio anisotropic etch cavities into silicon-based substrates.

Compatibility with Si and SiO2 substrates
Substrate accommodation: Small pieces up to 6″ wafers
Etch Rate: > 25 µm/min (Bosch), > 5 µm/min (Cryo), > 0.5 µm/min (Mixed)
Uniformity: < ± 3% (Bosch), < ± 5% (Cryo), < ± 5% (Mixed)
Maximum aspect ratio: 70:1 (Bosch), 30:1 (Cryo), 7:1 (Mixed)
Selectivity to PR: > 250:1 (Bosch), > 100:1 (Cryo), > 10:1 (Mixed)
High plasma stability, eliminating ‘first wafer effect’

Oxford PlasmaPro 100 Cobra ICP-RIE (Si)

The Oxford PlasmaPro 100 Cobra ICP-RIE System is hosted by the Pratt Microfabrication Facility. This tool is used to perform inductively-coupled plasma (ICP) reactive ion etching on silicon based materials, including SiO2, Si3N4, and isotropic etching on Si.

Etch Chemistries: SF6, CHF3, CF4, O2
SiO2, SiN, and isotropic Si etching
Substrate accommodation:
ICP to improve etch rates, profile control, uniformity and selectivity
Easy-to use computer interface

TePla Technics 100-E Oxygen Plasma Asher

The Technics 100-E is a Plasma Asher is available for resist stripping and descum processes. The system is hosted by the Wallberg Nanofabrication Facility

Maximum substrate size: 100 mm2 sample or 4″ wafer
Plasma chemistry: Oxygen only
Ultimate Pressure: < 8 x 10-5 Torr

Etching Wetbenches

The Pratt Microfabrication Facility hosts two wet processing stations configured for wet etch processes.

Controlled laminar flow provides a safe class 10 (ISO Class 4) working environment
Chemistries supported: HF etch, piranha etch, KOH etch, H3PO4 etch, buffered-oxide etch, chrome etch
Includes all necessary glass and plastic containers for small samples up to 8″ wafers.
Includes DI water, nitrogen gas utilities, protective sashes, controlled exhaust, acid-resistant gloves, face shields and aprons.

Dicing & Packaging

AML AWB-04 Aligner Wafer Bonder

The AWB-04 Aligner Wafer Bonder is hosted by the Pratt Microfabrication Facility. This tool is used to seal and encapsulate MEMS/IC device structures and create 3D interconnects on wafer-level devices.

Anodic, Direct (Radical Activated), Eutectic, Glass Frit, UV Adhesive, Solder & Thermocompression Bonding
In-situ alignment accuracy: 1 micron
10-6mbar Vacuum to 2bar process gas
Substrate accommodation: Small chips and 3″- 4″ wafers
Temperature Range: Up to 560° C
In-situ UV cure capability
Configured to support aligned polymer micro hot embossing and nano-imprinting

SCS 2010 Parylene Coater

The SCS 2010 Parylene Coater is hosted by the Pratt Microfabrication Facility. The tool is capable of depositing parylene films onto device chips and wafers, protecting them against moisture, dust, chemicals, and temperature extremes that may otherwise cause damage.

Parylene-C coating only
Closed-loop parylene vapor-pressure control
Sample sizes up to 15 cm x 15 cm
Parylene dimer capacity up to 100 gm
Three-layer rotating fixture

Disco DAD3220 Automatic Dicing Saw

The DAD3220 Automatic Dicing Saw is hosted by the Pratt Microfabrication Facility. This tool is used to perform high precision dicing of silicon wafers or glass substrates into smaller chips.

Auto-alignment, auto-focus, and auto-kerf check functions
Unlimited configurable independent user programs
4 programmable cutting channels with 320 degree max rotating angle
Cutting blades thickness: 100 – 400 micron
Max substrate size: 6” wafers or 6″ x 6″ substrates
160mm x 162mm cutting range
< 0.005/160 positioning accuracy
1.5 kW spindle at 30,000 per minute

Tousimis Autosamdri-815B Supercritical Point Dryer

The Autosamdri-815B Supercritical Point Dryer is hosted by the Pratt Microfabrication Facility. This tool is used to remove liquid from processed MEMS/NEMS devices without subjecting delicate structures to potentially destructive surface tension forces that are generated during the liquid-to-gas phase change.

4″, 3″, 2″ diameter wafer holders and 10mm square die holders included
Holders are HF compatible and can hold up to 5 wafers or die per process
Unique chamber inserts maximize efficiency in LCO2 consumption and process time
Internal filtration system delivers clean LCO2 into process chamber down to 0.4µm
Chamber illumination with viewing window
Automatic processing with status LEDs

TPT HB16 Wire Bonder

The HB16 Wire Bonder is hosted by the Pratt Microfabrication Facility. This tool is used to bond thin, electrically conductive metal wire or ribbon between precise locations on chips, slides, printed circuit boards, etc. This technique can be used to complete electrical pathways to small chips for subsequent device characterization or use with larger circuit elements.

Bond metals: Au, Al in wire and ribbon.
Ball-wedge and wedge-wedge bonding
A comprehensive loop profile library
Automatic, semi-automatic and step modes
100 customizable user programs
Pull testing equipment (bond strength measurement)
Stitch bonding capability

Imaging & Characterization

Probe Stations

Two probe stations are hosted by the Pratt Microfabrication Facility, including one probe station generously donated by Everbeing Int’l Corp.

Keithley SMU 2400 Graphical Series Sourcemeter

The SMU 2400 Sourcemeter is hosted in the Pratt Microfabrication Facility, and was generously donated by Tektronix, Inc.

HP 4155A Semiconductor Parameter Analyzer

The 4155A Semiconductor Parameter Analyzer is hosted by the Pratt Microfabrication Facility.

Nikon 3D Microscope

The Nikon 3D Microscope is hosted by the Pratt Microfabrication Facility.

Optical Microscopes

TNFC facilities provide access to optical microscopes for visual analysis of devices and samples.

Horiba Joben Yvon UVISEL Ellipsometer

The UVISEL Ellipsometer is hosted by the Pratt Microfabrication Facility.

Dektak Profilometer

Device Processing User Recipes

Wire Bonding Recipes

Bond Parameters

Parameter	Bond 1	Bond 2
Ultrasonic (US)	350	350
Time (ms)	400	400
Force (mN)	450	450
Heat (ºC)	120	120

Default ball bond parameters for 1 mil (25 μm) gold wire are outlined above. Adjustment (i.e. ±25, ±50) may be required to achieve successful bonds.

NOTE: Successful bond parameters may vary significantly depending on wire/pad materials, surface contamination/oxidation, thermal contact with heated stage, etc.

Process	Temp. (ºC)	Pressure (mTorr)	Gas flow (sccm)	Deposition rate (nm/min)
Stoichiometric	770	200	NH3:DCS 24:100	2.68
Low Stress	800	200	NH3:DCS 100:25	4.40

Parylene Source (g)	Film Thickness (nm)
0.15	100
2.2	1000
15	7000